Substrates
Advanced Substrate Materials
Where standard silicon fails, we deliver. Most MEMS foundries work with standard silicon. We specialize in materials engineered for extreme environments.
Silicon
Silicon remains the most widely used substrate material in semiconductor fabrication, offering a mature process ecosystem developed over decades of integrated circuit manufacturing. Its well-characterized material properties, abundant supply chain, and cost-effectiveness make it the default choice for conventional MEMS applications.
With a bandgap of 1.1 eV and reliable operation up to approximately 150°C, silicon is ideal for consumer electronics, automotive sensors at moderate temperatures, and industrial applications where extreme conditions are not a factor. The vast library of established silicon process recipes allows rapid development and high-yield production.
However, silicon’s limitations become apparent in harsh environments. Above 150°C, intrinsic carrier concentration rises sharply, degrading device performance. In high-radiation environments or corrosive atmospheres, silicon devices require extensive packaging solutions that add cost, weight, and failure modes.
Key Applications
- Consumer electronics
- Automotive sensors
- Industrial MEMS
- Medical devices
Silicon Carbide
Featured SubstrateSilicon carbide is our flagship harsh-environment substrate material. With a wide bandgap of 3.2 eV — three times that of silicon — SiC devices operate reliably at temperatures exceeding 800°C continuously, far beyond the point where standard silicon devices fail catastrophically.
The mechanical superiority of SiC is equally compelling. A Young’s modulus of approximately 450 GPa delivers twice the structural durability of silicon, making SiC MEMS devices resistant to shock, vibration, and mechanical fatigue in demanding operational environments. Combined with superior radiation resistance, SiC is the material of choice for the most extreme applications.
Where silicon fails at 150°C, our SiC sensors keep working at 800°C and beyond. This capability opens applications that were previously impossible with conventional MEMS technology: sensors mounted directly on jet engine turbine blades, downhole monitoring instruments for deep oil and gas drilling, nuclear reactor instrumentation, and space-qualified components for orbital and deep-space missions.
Key Applications
- Jet engine monitoring
- Oil & gas drilling
- Nuclear instrumentation
- Space-qualified systems
Aluminum Nitride
Aluminum nitride offers a unique combination of excellent piezoelectric properties and extreme temperature stability, making it indispensable for a class of MEMS devices that require electromechanical transduction in harsh environments. AlN thin films are CMOS-compatible, enabling integration with standard electronics fabrication processes.
Unlike many piezoelectric materials, aluminum nitride has no Curie temperature — it never loses its piezoelectric properties regardless of operating temperature. This makes AlN the definitive choice for piezoelectric MEMS devices that must function reliably at temperatures exceeding 1,000°C, where materials like PZT have long since depolarized and failed.
AlN’s piezoelectric properties enable energy harvesting from vibration and thermal gradients, self-powered wireless sensor nodes, and high-frequency acoustic resonators for RF-MEMS filters and oscillators. In biomedical applications, AlN’s biocompatibility and chemical stability enable implantable biosensors and acoustic-wave-based diagnostic devices.
Key Applications
- RF-MEMS filters
- Biosensors
- Energy harvesters
- Jet engine monitoring
Gallium Arsenide
Gallium arsenide delivers electron mobility approximately six times higher than silicon, enabling device operation at frequencies exceeding 250 GHz. This makes GaAs the substrate of choice for high-frequency MEMS, RF systems, and optoelectronic applications where silicon simply cannot keep pace.
As a direct bandgap semiconductor with a 1.42 eV gap, GaAs is uniquely suited for optoelectronic devices — LEDs, laser diodes, and photodetectors — as well as the integration of optical and mechanical elements on a single substrate. This capability is critical for emerging applications in optical MEMS switches and tunable photonic devices.
GaAs also exhibits inherent radiation resistance, making it a preferred material for space-qualified electronics and defense systems operating in high-radiation environments. Combined with its high-frequency performance, GaAs substrates enable the next generation of 5G/6G telecommunications infrastructure, satellite communications, phased array radar systems, and electronic warfare components.
Key Applications
- 5G/6G telecom
- RF amplifiers
- Space systems
- Defense electronics
At a Glance
Material Comparison
| Material | Bandgap | Max Temp | Key Advantage | Primary Applications |
|---|---|---|---|---|
| Silicon (Si) | 1.1 eV | ~150°C | Mature ecosystem, low cost | Consumer, automotive, industrial |
| Silicon Carbide (SiC) | 3.2 eV | 800°C+ | Extreme temp & radiation resistance | Aerospace, nuclear, oil & gas |
| Aluminum Nitride (AlN) | 6.2 eV | 1,000°C+ | Piezoelectric, no Curie temp | RF-MEMS, biosensors, energy |
| Gallium Arsenide (GaAs) | 1.42 eV | N/A (freq focus) | High electron mobility, 250 GHz+ | 5G/telecom, space, defense |
Multi-substrate capability is exceptionally rare. A single foundry offering Si + SiC + AlN + GaAs represents materials science expertise few organizations worldwide can match.
Need a Substrate Consultation?
Our materials engineers can help you select the optimal substrate for your device requirements and operating environment.